The Vacancy Effect on Thermal Interface Resistance between Aluminum and Silicon by Molecular Dynamics
نویسندگان
چکیده
منابع مشابه
Effects of vacancy defects on thermal conductivity in crystalline silicon: A nonequilibrium molecular dynamics study
We examine the effects of vacancy defects on thermal conductivity in bulk crystalline silicon (c-Si) using nonequilibrium molecular dynamics simulations. While most vacancies are thought to remain in the form of clusters in bulk c-Si, recent theoretical studies have predicted that small vacancy clusters energetically prefer to be fourfold coordinated by nullifying dangling bonds. Hence, in this...
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ژورنال
عنوان ژورنال: MRS Proceedings
سال: 2015
ISSN: 0272-9172,1946-4274
DOI: 10.1557/opl.2015.144